PART |
Description |
Maker |
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
V23818-K15-L46 V23818-K15-L16 |
Small Form Factor Single Mode 1300 nm 1.0625 Gbit/s Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5/2x10 Pinning with LC Connector 纤巧单模1300纳米1.0625 Gbit / s的光纤通道1.25千兆以太网收发器2x5/2x10的LC连接器钢
|
Infineon Technologies AG
|
V23849-R35-C55 V23849-R36-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; separated ground sheme
|
Infineon
|
TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
TC58NVG6DDJTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
H27U8G8T2B |
8 Gbit (1024 M x 8 bit) NAND Flash
|
Hynix
|
TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
S34ML16G2 |
16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|